g ? sic ? technology superbright leds CXXX-CB230-E1000 f e a t u r e s a p p l i c a t i o n s o high perform a nce ? com m unication handsets ? 1.3 m w (460, 470nm ) ? 650 w (525nm ) ? backlighting ? single w i re bond structure ? high resolution video displays ? class ii esd rating description cree?s cb series of superbright leds are a new generation of solid-state led em itters which com b ine highly ef f i cient ingan with cree?s proprietary sic substrate to deliver the ultim ate price/perform a nce for high intensity blue and green leds. the CXXX-CB230-E1000 is ideal for use in backlighting applications, high resolution video displays and high am bient light conditions. CXXX-CB230-E1000 chip diagram tops id e view g ? sic l e d ch ip 200 x 200 m mes a (j unct i on) 175 x 175 m gol d b ond p a d 120 m d i amet er anode (+) die cros s section t = 250 m back sid e me t a llizat io n c a t hode (- ) in gan si c su b s tr a t e cpr3au rev. b
g ? sic ? technology superbright leds CXXX-CB230-E1000 maximum ratings at t a = 25c notes 1&3 CXXX-CB230-E1000 dc forward current 15m a peak forward current (1/10 duty cycle @ 1khz) 35m a led junction tem p erature 125c reverse voltage 5 v operating tem p erature range -20c to +80c storage tem p erature range -30c to +100c electrostatic discharge threshold (hbm) note 2 1 0 0 0 v typical electrical/optical characteristics at t a = 25c, if = 10ma note 3 part num b er forward voltage (v f, v) radiant flux (p, m w ) reverse cu rren t [ i(vr=5 v ), a] flux (m lm ) peak w a velength ( o p, nm ) dom i nant w a velength ( o d, nm ) half width ( o d, nm ) optical rise tim e ( w , n s ) t y p m a x m i n t y p m a x t y p t y p m i n t y p m a x t y p t y p c 4 6 0 3 . 5 3. 7 1. 0 1. 3 1 0 1 0 0 4 5 5 455 460 4 6 5 2 6 3 0 c 4 7 0 3 . 5 3. 7 1. 0 1. 3 1 0 1 0 0 4 6 5 465 470 4 7 5 2 6 3 0 c 5 2 5 3 . 5 3. 7 . 500 . 6 5 0 1 0 3 8 0 5 1 8 520 525 5 3 5 3 5 3 0 mechanical specifications note 4 c x x x - c b 2 3 0 - e 1 0 0 0 d e s c r i p t i o n d i m e n s i o n t o l e r a n c e p-n junction area (m ) 175 x 175 25 bottom area (m ) 200 x 200 25 chip thickness (m ) 250 25 au bond pad diam eter (m ) 120 20 au bond pad thickness (m ) 1.2 0.5 back contact grid spacing (m ) 125 15 back contact metal w i dth (m ) 15 +10, -5 notes: 1) maxim u m ratings are package dependent. t h e above ratings w e re determ ined using a t - 1 3/4 package (w ith h y sol o s 4000 epoxy ) for characterization. seller m a kes no representations regarding ratings for packag es other than the t - 1 3/4 p ackage used by seller. the forward currents (dc and pea k) are not lim ited by the g ?sic die but by the effect of the l e d j unction tem p erature on the package. t h e j unc tion tem p erature lim it of 125c is a lim it of the t - 1 3/4 packa ge; j unction tem p erature should be characterized in a specific package to determ ine lim itations. a ssem b ly pro cessing tem p erature m u st not exceed 350c (< 15 m i nutes). 2) product resistance to electrostatic discha rge (e sd ) is m easured by sim u lating e s d us ing a rapid avalanche energy test (ra e t ) . t h e ra e t procedures are designed to approxim a te the m a xim u m e s d ratings show n. seller gives no other assurances regarding the ability of products to w ithstand e s d . 3) a ll products conform to the listed m i ni m u m and m a xim u m specifications for electrical and optical characteristics, w h en assem bled and operated at 10 m a w ithin the m a xim u m ratings show n above. e fficiency decreases at higher currents. t y pical values given ar e the average values expected by seller i n large quantities and are provided for inform ation only . seller gives no assurances products sh ipped w ill exhibit such ty pical ratings. a ll m easurem ents w e re m a de using lam p s i n t - 1 3/4 packages (w ith h y sol o s 4000 epoxy ). optical characteristics were m easured in a photoresearch sp ectrascan integrating sphere. illum i nance e . 4. ) a ll products conform to the listed m echanical specifications w ithin the tolerance show n. 2 cpr3au rev. b
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